DocumentCode :
1186320
Title :
Copper trace cracking of BGA packages under die perimeter: combined effect of mold compound and die attach materials
Author :
Chungpaiboonpatana, Surasit ; Shi, Frank G.
Author_Institution :
Henry Sarnueli Sch. of Eng., Univ. of California, Irvine, CA, USA
Volume :
4
Issue :
3
fYear :
2004
Firstpage :
467
Lastpage :
481
Abstract :
This research examines the combined effect of mold and epoxy die attach materials on the cracking formation of fine copper traces routed under the die perimeters of plastic BGA packages, and under different thermal ramping rates. A designed plastic BGA package with specific traces routed and coupled with the active silicon device procured is used. The objective is accomplished by the use of the methods of finite elemental analysis coupled with a full factorial material experiment. For the JEDEC´s MRT L3 and TC Condition B reliability stressing, it is found that a lower CTE and a lower dynamic tensile modulus combination of both mold and die attach materials tends to reduce the occurrence of trace cracking, while the effect of thermal ramping rate is found to be insignificant until 1000 cycles of TC is exceeded. Furthermore, a detailed failure analysis is performed on the stressed parts through continuity testing, mold decapsulation, high magnification X-ray, CSAM, SEM, and parallel polishing to confirm the modeling results and experimental findings.
Keywords :
ball grid arrays; failure analysis; finite element analysis; microassembling; semiconductor device reliability; semiconductor device testing; thermal stress cracking; BGA packages; CSAM; JEDEC; SEM; active silicon device; continuity testing; copper trace cracking; cracking formation; die attach materials; die perimeter; failure analysis; finite elemental analysis; full factorial material experiment; high magnification X-ray; moisture reliability test; mold compound; mold decapsulation; parallel polishing; reliability stressing; temperature cycling; tensile modulus combination; thermal ramp rate; thermal ramping; Copper; Failure analysis; Finite element methods; Materials reliability; Microassembly; Performance evaluation; Plastic packaging; Silicon devices; Testing; Thermal stresses;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2004.829192
Filename :
1369209
Link To Document :
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