Title :
Effect of QD size and band-offsets on confinement energy in InN QD heterostructure
Author :
Paul, Utpal ; Hasan, Mohammed ; Rahman, M.T. ; Bhuiyan, A.G.
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
Abstract :
Detailed theoretical analysis of how QD size variation and band-offset affects the confinement energy of InN QD is presented. Low dimensional structures show a strong quantum confinement effect, which results in shifting the ground state away from the band edge and discrete eigen-states. Graphically solving 1D Schrödinger ground quantized energy levels of electrons were computed and using Luttinger-Khon 4×4 Hamiltonian matrix ground quantized energy level of holes were determined. Our results allow us to tune dot size and band-offset to obtain required bandgap for InN based low dimensional device design.
Keywords :
III-V semiconductors; Schrodinger equation; energy gap; ground states; indium compounds; semiconductor heterojunctions; semiconductor quantum dots; InN; Luttinger-Khon 4×4 Hamiltonian matrix ground quantized energy level; band edge; band gap; band-offset effects; confinement energy; discrete eigenstates; graphically solving 1D Schrodinger ground quantized energy levels; ground state; low dimensional device design; quantum confinement effect; quantum dot heterostructure; quantum dot size effect; quantum dot size variation; theoretical analysis; Charge carrier processes; Energy states; Equations; Materials; Mathematical model; Optoelectronic devices; Quantum dots; Confinement energy; Indium Nitride; Quantum dots (QD);
Conference_Titel :
Electrical Information and Communication Technology (EICT), 2013 International Conference on
Conference_Location :
Khulna
Print_ISBN :
978-1-4799-2297-0
DOI :
10.1109/EICT.2014.6777897
