On the Pseudomorphic High Electron Mobility Transistors (PHEMTs) With a Low-Temperature Gate Approach

Author

Chen, Li-Yang ; Chen, Huey-Ing ; Cheng, Shiou-Ying ; Chen, Tzu-Pin ; Tsai, Tsung-Han ; Liu, Yi-Jung ; Huang, Yi-Wen ; Huang, Chien-Chang ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan

Volume

30

Issue

4

fYear

2009

fDate

4/1/2009 12:00:00 AM

Firstpage

325

Lastpage

327

Abstract

The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with a 1times100 mum² gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.

Keywords

III-V semiconductors; aluminium compounds; electroless deposited coatings; gallium arsenide; high electron mobility transistors; low-temperature techniques; AlGaAs-InGaAs-GaAs; electroless-plated deposition; low-temperature gate approach; pseudomorphic high electron mobility transistors; Electroless plated (EP); enhancement-mode (E-mode); pseudomorphic high electron mobility transistor (PHEMT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2014788

Filename

4798188