• DocumentCode
    1186437
  • Title

    GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method

  • Author

    Lee, Ching-Ting ; Lee, Hsin-Ying ; Chen, Hong-Wei

  • Author_Institution
    Inst. of Opt. Sci., Nat. Central Univ., Chung-li, Taiwan
  • Volume
    24
  • Issue
    2
  • fYear
    2003
  • Firstpage
    54
  • Lastpage
    56
  • Abstract
    We report on a SiO/sub 2/-Ga/sub 2/O/sub 3/ gate insulator stack directly grown on n-type GaN by the photoelectrochemical oxidation method. The resultant MOS devices are fabricated using standard photolithography and liftoff techniques. The effect of annealing temperature on the SiO/sub 2/-Ga/sub 2/O/sub 3//n-type GaN MOS devices is investigated. The properties of high breakdown field, low gate leakage current, and low interface state density are investigated for the MOS devices.
  • Keywords
    III-V semiconductors; MIS devices; annealing; gallium compounds; interface states; leakage currents; oxidation; photoelectrochemistry; photolithography; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; GaN; GaN MOS device; I-V characteristics; SiO/sub 2/-Ga/sub 2/O/sub 3/; SiO/sub 2/-Ga/sub 2/O/sub 3/ gate insulator stack; SiO/sub 2/-Ga/sub 2/O/sub 3/ insulator; annealing temperature; high breakdown field; liftoff technique; low gate leakage current; low interface state density; photoelectrochemical oxidation method; photolithography technique; Annealing; Electric breakdown; Gallium nitride; Insulation; Interface states; Leakage current; Lithography; MOS devices; Oxidation; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2002.807711
  • Filename
    1196014
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1186437