Title :
Observation of very high peak-to-valley current ratio (⩾9.4) in amorphous silicon/silicon-carbide double barrier structure with barrier enhancement layer
Author :
Fang, Y.K. ; Chen, Kuin-Hui ; Liu, Ching-Ru ; Hwang, Jun-Dar ; Wu, Kun-Shiu ; Liou, Wan-Rone
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
10/1/1994 12:00:00 AM
Abstract :
A negative differential resistance current/voltage (I/V) curve with a very high peak-to-valley current (PTV) ratio (⩾9.4) has been obtained in the a-Si:H/a-SiC:H double barrier structure with added amorphous silicon barrier enhancement layers. Although similar phenomena have been reported in the crystalline AlGaAs/GaAs double barrier diodes, the effect of the added barrier enhancement layers on the PTV ratio is not so significant as the amorphous silicon. A primary model is proposed to explain this anomalous result. Based on the model, the parameters to lower the leakage current and enhance the resonant tunneling current are suggested
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; resonant tunnelling devices; semiconductor diodes; silicon; silicon compounds; AlGaAs; GaAs; PTV ratio; Si:H; SiC:H; a-Si:H/a-SiC:H double barrier structure; added barrier enhancement layers; amorphous silicon; amorphous silicon barrier enhancement layers; amorphous silicon/silicon-carbide double barrier structure; anomalous result; barrier enhancement layer; crystalline AlGaAs/GaAs double barrier diodes; high peak-to-valley current ratio; negative differential resistance current/voltage curve; primary model; resonant tunneling current; very high peak-to-valley current ratio; Amorphous materials; Amorphous silicon; Crystallization; Detectors; Gallium arsenide; Glass; Laboratories; Resonant tunneling devices; Semiconductor diodes; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
