DocumentCode :
118651
Title :
Simulation study of a novel TSV structure
Author :
Zhensong Li ; Min Miao ; Qinghai Li ; Dacheng Yang
Author_Institution :
Sch. of Inf. & Commun. Eng., Beijing Univ. of Posts & Telecommun., Beijing, China
fYear :
2014
fDate :
12-15 Aug. 2014
Firstpage :
829
Lastpage :
832
Abstract :
A novel TSV structure, formed by two semi-cylinders combining with a quadrangular is proposed and analyzed in this paper. This novel structure can enhance the density of TSV array without significantly decreasing transmission performance and reducing impedance mismatch in TSV-RDL transmission line or depressing the signal crosstalk. Effects of design parameters, such as the side length of quadrangular and the connection angle between TSV and the Redistribution Layer (RDL) are investigated and concluded by a 3D electromagnetic solver. Performance comparison between the novel TSV structure and the traditional one is also provided by simulation. The simulation results show that the novel TSV structure has excellent performance in some respects and can be used as a good substitution of traditional TSV when the TSV array density needs to be increased or the space for processing TSV is limited.
Keywords :
crosstalk; three-dimensional integrated circuits; 3D electromagnetic solver; RDL; TSV array density enhancement; TSV structure; TSV-RDL transmission line; connection angle; design parameter effect; impedance mismatch reduction; redistribution layer; signal crosstalk; simulation study; transmission performance; Arrays; Impedance; Silicon; Simulation; Solid modeling; Three-dimensional displays; Through-silicon vias; 3D Modeling; signal propagation loss; three dimensional system in package(3D SIP); through silicon via(TSV);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
Type :
conf
DOI :
10.1109/ICEPT.2014.6922776
Filename :
6922776
Link To Document :
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