A nonvolatile semiconductor memory device in 6H-SiC for harsh environment applications

Author

Li, Ce ; Duster, J.S. ; Kornegay, Kevin T.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

Volume

24

Issue

2

fYear

2003

Firstpage

72

Lastpage

74

Abstract

An electrically erasable programmable read-only memory (EEPROM) cell fabricated on a 6H-SiC substrate is reported. It is the first fully functional SiC EEPROM device. This device uses a generic double-polysilicon-gate configuration. It has been tested at both room temperature and elevated temperatures, up to 200/spl deg/C, to demonstrate full programmability. The threshold voltage shifts between programmed and erased states, at all tested temperatures, are larger than 4.5 V. In both states, the device functions satisfactorily as an n-type MOSFET. Charge retention time is more than 24 h at room temperature.

Keywords

EPROM; MOS memory circuits; high-temperature electronics; integrated circuit reliability; silicon compounds; wide band gap semiconductors; 20 to 200 degC; 6H-SiC; EEPROM; SiC; charge retention time; electrically erasable programmable read-only memory; erased states; generic double-polysilicon-gate configuration; harsh environment applications; n-type MOSFET; nonvolatile semiconductor memory device; programmability; programmed states; threshold voltage shifts; EPROM; MOSFET circuits; Nonvolatile memory; PROM; Semiconductor memory; Silicon carbide; Substrates; Temperature; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.807691

Filename

1196020