Title :
Effects of floating body on double polysilicon partially depleted SOI nonvolatile memory cell
Author :
Chan, Alain Chun-Keung ; Chan, Mansun
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
The floating-body effect of nonvolatile memory cells fabricated using partially depleted silicon-on-insulator (SOI) technology has been investigated using two-dimensional numerical device simulation. Compared with similar bulk devices, the floating-body effect of partially depleted SOI MOSFETs introduces instability in the value of the drain current during sensing and extra hot-electron gate current in programming. The effects of the drain-current instability on the error margins in read operation are studied. The floating-body effect is found to be heavily dependent on biasing condition.
Keywords :
MOS memory circuits; cellular arrays; elemental semiconductors; hot carriers; semiconductor device models; silicon; silicon-on-insulator; Si; biasing condition; double polysilicon structure; drain current; floating body; hot-electron gate current; nonvolatile memory cell; partially depleted SOI MOSFETs; two-dimensional numerical device simulation; Doping; Fluctuations; MOSFETs; Medical simulation; Nonvolatile memory; Numerical simulation; Silicon on insulator technology; Substrates; System-on-a-chip; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.808840
