Title :
An amorphous silicon triode rectifier switching device for active-matrix liquid-crystal display
Author :
Jang, Jin ; Kim, Kyu Man ; Cho, Kyu Sik ; Choo, Byoung Kwon ; Um, Gregory
Author_Institution :
TFT-LCD Nat. Lab., Kyung Hee Univ., Seoul, South Korea
Abstract :
A triode rectifier switching (TRS) device composed of two amorphous silicon (a-Si) diodes and one resistor has been demonstrated experimentally to be a good switching device for active-matrix liquid-crystal display (AMLCD). The output and transfer characteristics of a TRS are very similar to those of an a-Si thin-film transistor. High on/off current ratio (>5/spl times/10/sup 6/) and low off-state leakage currents (<0.4 pA) have been demonstrated with a-Si diodes and a-Si resistor, indicating that the TRS is suitable for high-performance switching devices for AMLCD.
Keywords :
Schottky diodes; amorphous semiconductors; elemental semiconductors; leakage currents; liquid crystal displays; semiconductor switches; silicon; solid-state rectifiers; 0.4 pA; AMLCD; Schottky diodes; Si; active-matrix liquid-crystal display; off-state leakage currents; on/off current ratio; three-terminal device; transfer characteristics; triode rectifier switching device; Active matrix liquid crystal displays; Amorphous silicon; Chromium; Circuit simulation; Leakage current; Liquid crystal displays; Rectifiers; Resistors; Schottky diodes; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.808838
