An amorphous silicon triode rectifier switching device for active-matrix liquid-crystal display

Author

Jang, Jin ; Kim, Kyu Man ; Cho, Kyu Sik ; Choo, Byoung Kwon ; Um, Gregory

Author_Institution

TFT-LCD Nat. Lab., Kyung Hee Univ., Seoul, South Korea

Volume

24

Issue

2

fYear

2003

Firstpage

78

Lastpage

80

Abstract

A triode rectifier switching (TRS) device composed of two amorphous silicon (a-Si) diodes and one resistor has been demonstrated experimentally to be a good switching device for active-matrix liquid-crystal display (AMLCD). The output and transfer characteristics of a TRS are very similar to those of an a-Si thin-film transistor. High on/off current ratio (>5/spl times/10/sup 6/) and low off-state leakage currents (<0.4 pA) have been demonstrated with a-Si diodes and a-Si resistor, indicating that the TRS is suitable for high-performance switching devices for AMLCD.

Keywords

Schottky diodes; amorphous semiconductors; elemental semiconductors; leakage currents; liquid crystal displays; semiconductor switches; silicon; solid-state rectifiers; 0.4 pA; AMLCD; Schottky diodes; Si; active-matrix liquid-crystal display; off-state leakage currents; on/off current ratio; three-terminal device; transfer characteristics; triode rectifier switching device; Active matrix liquid crystal displays; Amorphous silicon; Chromium; Circuit simulation; Leakage current; Liquid crystal displays; Rectifiers; Resistors; Schottky diodes; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.808838

Filename

1196022