Silicon tunnel diodes formed by proximity rapid thermal diffusion

Author

Wang, Jinli ; Wheeler, Dane ; Yan, Yan ; Zhao, Jialin ; Howard, Scott ; Seabaugh, Alan

Author_Institution

Dept. of Electr. Eng., Univ. of Notre Dame, IN, USA

Volume

24

Issue

2

fYear

2003

Firstpage

93

Lastpage

95

Abstract

We demonstrate the first silicon tunnel diodes (TDs) formed using proximity rapid thermal diffusion and spin-on diffusants. Room temperature peak-to-valley current ratio of 2 is obtained at approximately 100 A/cm/sup 2/ peak current density. Secondary ion mass spectroscopy is used to compare proximity rapid thermal diffusion with rapid thermal diffusion from spin-coated diffusants in direct contact with a device wafer. The proximity rapid thermal diffusion approach provides a cleaner wafer surface for subsequent processing and yields TDs with good local uniformity.

Keywords

current density; elemental semiconductors; negative resistance; rapid thermal processing; secondary ion mass spectra; silicon; spin coating; thermal diffusion; tunnel diode oscillators; tunnel diodes; Esaki tunnel diodes; Si tunnel diodes; Si:B-Si:P; Si:P; negative differential resistance; peak current density; proximity rapid thermal diffusion; room temperature peak-to-valley current ratio; secondary ion mass spectroscopy; spin-coated diffusants; spin-on diffusants; tunnel diode oscillator; wafer surface cleanliness; Boron; CMOS process; CMOS technology; Fabrication; Hafnium; Rapid thermal annealing; Rapid thermal processing; Semiconductor diodes; Silicon; Thermal resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.807706

Filename

1196027