Title :
The effect of lateral leakage current on the experimental gain/current-density curve in quantum-well ridge-waveguide lasers
Author :
Hu, S.Y. ; Young, D.B. ; Gossard, A.C. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
10/1/1994 12:00:00 AM
Abstract :
We stress the importance of considering the effect of lateral leakage current on the material gain/current-density characteristics measured from ridge-waveguide diode lasers. It is found that the inclusion of lateral leakage current is crucial to obtaining a self-consistent result. An experimental demonstration has been performed on an In0.2Ga0.8As/AlGaAs strained single quantum-well laser sample, from which a gain curve with transparency current density of 53.8 A/cm2 was obtained. By using devices of different geometries, the variation of leakage currents is measured and the accuracy of the resultant gain curves is discussed
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; leakage currents; optical waveguides; semiconductor lasers; In0.2Ga0.8As/AlGaAs strained single quantum-well laser sample; InGaAs-AlGaAs; experimental gain/current-density curve; gain curve accuracy; geometries; lateral leakage current; material gain/current-density characteristics; quantum-well ridge-waveguide lasers; ridge-waveguide diode lasers; self-consistent result; transparency current density; Current density; Current measurement; Diode lasers; Gain measurement; Geometrical optics; Leakage current; Optical materials; Performance gain; Quantum well lasers; Stress measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of
