Title :
Analysis of gate shot noise in MOSFETs with ultrathin gate oxides
Author_Institution :
Dept. of Eng., Univ. of Ferrara, Italy
Abstract :
The impact of gate shot noise associated with gate leakage current in MOSFETs is studied by means of analytical models and numerical device simulation. The effects of shot noise on the main two-port noise parameters (minimum noise figure, equivalent noise resistance, and optimum source admittance) and their dependence on oxide thickness and on the level of tunneling leakage current are analyzed.
Keywords :
MOSFET; leakage currents; microwave field effect transistors; semiconductor device models; semiconductor device noise; shot noise; tunnelling; MOSFETs; RF MOSFET models; analytical models; equivalent noise resistance; excess minimum noise factor; gate leakage current; gate shot noise; minimum noise figure; numerical device simulation; optimum source admittance; oxide thickness; tunneling leakage current; two-port noise parameters; ultrathin gate oxides; Admittance; Analytical models; Leakage current; MOSFETs; Noise figure; Noise generators; Noise level; Radio frequency; Semiconductor device noise; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.807695
