DocumentCode
1186646
Title
Analysis of gate shot noise in MOSFETs with ultrathin gate oxides
Author
Fiegna, Claudio
Author_Institution
Dept. of Eng., Univ. of Ferrara, Italy
Volume
24
Issue
2
fYear
2003
Firstpage
108
Lastpage
110
Abstract
The impact of gate shot noise associated with gate leakage current in MOSFETs is studied by means of analytical models and numerical device simulation. The effects of shot noise on the main two-port noise parameters (minimum noise figure, equivalent noise resistance, and optimum source admittance) and their dependence on oxide thickness and on the level of tunneling leakage current are analyzed.
Keywords
MOSFET; leakage currents; microwave field effect transistors; semiconductor device models; semiconductor device noise; shot noise; tunnelling; MOSFETs; RF MOSFET models; analytical models; equivalent noise resistance; excess minimum noise factor; gate leakage current; gate shot noise; minimum noise figure; numerical device simulation; optimum source admittance; oxide thickness; tunneling leakage current; two-port noise parameters; ultrathin gate oxides; Admittance; Analytical models; Leakage current; MOSFETs; Noise figure; Noise generators; Noise level; Radio frequency; Semiconductor device noise; Tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2002.807695
Filename
1196032
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