Title :
Reliability analysis of power MOSFET
Author :
Peisheng Liu ; Jinxin Huang ; Ying Lu ; Longlong Yang
Author_Institution :
Jiangsu Key Lab. of ASIC Design, Nantong Univ., Nantong, China
Abstract :
As an indispensible part of electronic equipment, the reliability of the whole system is affected by the degradation performance of power MOSFET tube. Based on geometry, material properties and boundary conditions, the repeated testing can be reduced, and the period of failure analysis can be shortened. This article is based on the finite element model of power MOSFET TO-263, electric thermal - mechanical coupling analysis is introduced. The steady and transient thermal analysis is given, and then the inelastic strain range of thermal stress is calculated Finally on the basis of these, simulation can be realized, thermal fatigue life of power MOSFET tube is predicted through the Coffin - Manson´s law.
Keywords :
failure analysis; geometry; materials properties; materials testing; power MOSFET; semiconductor device reliability; thermal analysis; thermal stress cracking; transient analysis; Coffin-Mansons law; boundary conditions; degradation performance; electric thermal-mechanical coupling analysis; electronic equipment; failure analysis period; finite element model; geometry; indispensible part; inelastic strain range; material properties; power MOSFET tube; repeated testing reduction; steady state analysis; system reliability analysis; thermal fatigue life; thermal stress; transient thermal analysis; Fatigue; Finite element analysis; Heating; MOSFET; Materials; Reliability; Temperature distribution; MOSFET; TO-263; fatigue life; reliability; simulation;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICEPT.2014.6922796
