DocumentCode :
1187188
Title :
Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process
Author :
Ker, Ming-Dou ; Hsu, Kuo-Chun
Author_Institution :
Nanoelectronics & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Volume :
50
Issue :
2
fYear :
2003
Firstpage :
397
Lastpage :
405
Abstract :
The turn-on mechanism of a silicon-controlled rectifier (SCR) device is essentially a current triggering event. While a current is applied to the base or substrate of the SCR device, it can be quickly triggered into its latching state. In this paper, a novel design concept to turn on the SCR device by applying the substrate-triggered technique is first proposed for effective on-chip electrostatic discharge (ESD) protection. This novel substrate-triggered SCR device has the advantages of controllable switching voltage and adjustable holding voltage and is compatible with general CMOS processes without extra process modification such as the silicide-blocking mask and ESD implantation. Moreover, the substrate-triggered SCR devices can be stacked in ESD protection circuits to avoid the transient-induced latch-up issue. The turn-on time of the proposed substrate-triggered SCR devices can be reduced from 27.4 to 7.8 ns by the substrate-triggering technique. The substrate-triggered SCR device with a small active area of only 20 μm × 20 μm can sustain the HBM ESD stress of 6.5 kV in a fully silicided 0.25-μm CMOS process.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; protection; thyristors; 0.25 micron; 20 micron; 6.5 kV; 7.8 ns; adjustable holding voltage; controllable switching voltage; current triggering event; electrostatic discharge protection; fully silicided CMOS process; latching state; on-chip ESD protection; silicon-controlled rectifier device; substrate-triggered SCR device; turn-on mechanism; CMOS process; CMOS technology; Circuits; Electrostatic discharge; Protection; Rectifiers; Stress; Thyristors; Ultra large scale integration; Voltage control;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.809028
Filename :
1196084
Link To Document :
بازگشت