• DocumentCode
    1187256
  • Title

    Impact-ionization-assisted intermediate band solar cell

  • Author

    Luque, Antonio ; Martí, Antonio ; Cuadra, Lucas

  • Author_Institution
    Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
  • Volume
    50
  • Issue
    2
  • fYear
    2003
  • Firstpage
    447
  • Lastpage
    454
  • Abstract
    The effect on the efficiency of the intermediate band solar cell of certain types of impact ionization mechanisms is studied. It turns out to have several interesting advantages. For example, this mechanism may lead to cells with an efficiency that, although similar to that of the multijunction cells, would be otherwise very insensitive to the spectral mismatch. The efficiency of structures of p, n, or intrinsic type is also discussed in addition to the metallic intermediate band analyzed in earlier works.
  • Keywords
    Auger effect; Fermi level; electron-hole recombination; impact ionisation; semiconductor device models; solar cells; Auger recombination; impact ionization mechanisms; intermediate band solar cell; intrinsic type structures; metallic intermediate band; n-type structures; p-type structures; photovoltaics; solar cell efficiency; spectral mismatch; Absorption; Electron emission; Impact ionization; Manufacturing; Photonic band gap; Photovoltaic cells; Quantum dots; Solar power generation; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.809024
  • Filename
    1196090