DocumentCode
1187256
Title
Impact-ionization-assisted intermediate band solar cell
Author
Luque, Antonio ; Martí, Antonio ; Cuadra, Lucas
Author_Institution
Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
Volume
50
Issue
2
fYear
2003
Firstpage
447
Lastpage
454
Abstract
The effect on the efficiency of the intermediate band solar cell of certain types of impact ionization mechanisms is studied. It turns out to have several interesting advantages. For example, this mechanism may lead to cells with an efficiency that, although similar to that of the multijunction cells, would be otherwise very insensitive to the spectral mismatch. The efficiency of structures of p, n, or intrinsic type is also discussed in addition to the metallic intermediate band analyzed in earlier works.
Keywords
Auger effect; Fermi level; electron-hole recombination; impact ionisation; semiconductor device models; solar cells; Auger recombination; impact ionization mechanisms; intermediate band solar cell; intrinsic type structures; metallic intermediate band; n-type structures; p-type structures; photovoltaics; solar cell efficiency; spectral mismatch; Absorption; Electron emission; Impact ionization; Manufacturing; Photonic band gap; Photovoltaic cells; Quantum dots; Solar power generation; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.809024
Filename
1196090
Link To Document