Title :
Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
Author :
Rafael-Valdivia, G. ; Zhiguo Su ; Urquizo, Anthony ; Mendoza, Thalia
Author_Institution :
P.P. Ing. Software, Univ. La Salle, Bogota, Peru
Abstract :
A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions.
Keywords :
III-V semiconductors; broadband networks; data communication; gallium arsenide; microwave transistors; radiofrequency power amplifiers; semiconductor device models; wide band gap semiconductors; GaAs; GaAs transistors; GaN; GaN transistors; broadband data communication; frequency dispersion phenomena; wideband communications; Dispersion; Gallium nitride; Integrated circuit modeling; Mathematical model; Pulse measurements; Radio frequency; Transistors; Circuit modeling; FETs; memory effects; microwave devices; pulsed measurements; scattering parameters;
Conference_Titel :
Communications (LATINCOM), 2014 IEEE Latin-America Conference on
Conference_Location :
Cartagena de Indias
Print_ISBN :
978-1-4799-6737-7
DOI :
10.1109/LATINCOM.2014.7041886
