A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications

Author

Thei, Kong-Beng ; Cheng, Chung-Long ; Lin, Hsin-Chien ; Chang, Tong-Sen ; Tsai, Nun-Sian ; Lee, Kuo-Hwa ; Chuang, Hung-Ming ; Tsai, Sheng-Fu ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

50

Issue

2

fYear

2003

Firstpage

516

Lastpage

518

Abstract

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications has been demonstrated and studied. A simple model is proposed to analyze its important parameters such as the voltage-dependent bulk sheet resistance, interface resistance, and voltage coefficient of resistance (VCR). An anomalous voltage-dependent characteristic of overall resistance is found to mainly result from the existence of interface resistance. The proposed structure of a polysilicon resistor with a larger effective width of interface region shows substantial suppression of the voltage-dependent resistance deviation caused by interface resistance. The reduction of the VCR value is also obtained for the new structure. Consequently, from experimental results, the proposed structure can be used in precise (lower VCR) polysilicon resistors.

Keywords

CMOS integrated circuits; electric resistance; elemental semiconductors; integrated circuit modelling; resistors; semiconductor device models; silicon; Si; VCR value reduction; anomalous voltage-dependent characteristic; interface resistance; model; polysilicon resistor; subquarter micron CMOS device applications; voltage coefficient of resistance; voltage-dependent bulk sheet resistance; Analytical models; Charge carrier processes; Degradation; Density measurement; Differential equations; Impurities; Nonlinear equations; Resistors; Video recording; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.809041

Filename

1196101