Title :
Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors
Author :
Ravi, M.R. ; DasGupta, Amitava ; DasGupta, Nandita
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
Abstract :
It is shown in this work that sulfur passivation followed by a deionized water rinse reduces the dark current of InGaAs-InP PIN photodetectors significantly. This reduction in dark current is shown to be due to reduced recombination at the exposed mesa surface. Detectors with polyimide capping after sulfur passivation showed no degradation in characteristics with time.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; p-i-n photodiodes; passivation; photodetectors; surface recombination; InGaAs-InP; PIN photodetectors; characteristics degradation; dark current; deionized water rinse; exposed mesa surface; passivation; polyimide capping; surface recombination; Dark current; Detectors; Etching; Gallium arsenide; Indium phosphide; Passivation; Photodetectors; Polyimides; Radiative recombination; Surface treatment;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.808530
