Internal optical loss measurements in InGaAs-InAlGaAs quantum-well lasers operating around 1550 nm

Author

Jain, M. ; Ironside, C.N.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, UK

Volume

15

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

631

Lastpage

633

Abstract

A multisection device technique is employed to carry out internal optical loss measurements in two types of InGaAs-InAlGaAs quantum-well structures. One structure consists of conventional identical-width quantum wells and the other, a broader spectral-width material, consists of multiple-width quantum wells in the active region. The temperature dependence of the internal optical losses is also investigated for both structures.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser variables measurement; optical losses; quantum well lasers; semiconductor quantum wells; 1550 nm; 1550 nm operation; InGaAs-InAlGaAs; InGaAs-InAlGaAs quantum-well lasers; InP; InP substrate; active region; asymmetric quantum wells; broader spectral-width material; identical-width quantum wells; internal optical loss measurements; multiple-width quantum wells; multisection device technique; temperature dependence; Loss measurement; Optical devices; Optical losses; Optical materials; Optical noise; Optical scattering; Optical waveguides; Quantum well lasers; Semiconductor materials; Temperature dependence;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.809984

Filename

1196118