Title :
Mobility enhancement
Author :
Mohta, Nidhi ; Thompson, Scott E.
Author_Institution :
Florida Univ., Gainesville, FL, USA
Abstract :
This article is targeted as an introduction to the physics of strained Si and the current state of the art in uniaxial strained Si MOSFET. The first part of the article explains how strain alters the valence and conduction band of Si as well as scattering rates. This is followed by a review of state-of-the-art strained techniques being implemented in 90- and 65-nm process technologies. Finally, we conclude with a discussion of the future scalability of strained Si MOSFETs in the ballistic regime and nanoscale CMOS.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; ballistic transport; carrier mobility; conduction bands; elemental semiconductors; nanoelectronics; silicon; stress effects; valence bands; 65 nm; 90 nm; Si; SiGe; ballistic regime; conduction bands; mobility enhancement; nanoscale CMOS; scattering rate; strained silicon; uniaxial strained MOSFET; valence bands; Capacitive sensors; Charge carrier processes; Compressive stress; Conductivity; Effective mass; Electron mobility; Light scattering; Scattering parameters; Temperature; Tensile stress;
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.2005.1517386
