A simulation of Intelligent Power Module under power cycling condition

This paper focuses on the performance of IPM (Intelligent Power Module) under power cycling test which is simulated by a FEA (Finite Element Analysis) method. Through the method of control variables some key parameters about the module´s thermal and structure properties can be obtained. The key parameters in the calculation include power dissipation of silicon chip, cycle period, different materials of ceramic substrate and solder layer thickness. A series of factors are adopted in the simulation to evaluate the influence of power cycling test on IPM. The disciplinary conclusion can be a suggestion for package design.