Title :
Effect of Al-0.5%Cu thin film on reliability of IGBT module
Author :
Wen Zhao ; Yong Wang ; Ming Li ; Liming Gao
Author_Institution :
Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
As the major unit of the electrical energy transformations device, IGBT (Insulated Gate Bipolar Transistor) determines the lifetime of the power device immediately. IGBT module is normally made up of chip, DBC (Direct Bonded Copper), substrate and bonding wire, Due to the different CTE(Coefficient of Thermal Expansion), thermal stress occurs when IGBT module works. which leads to device failure. In this research, a FEA (Finite Element Analysis) simulation has been used to estimate the influence of Al-Cu thin film to the thermal stress of bonding wire. Based on coupled thermal-mechanical simulation, the stress caused by CTE is calculated to analysis the temperature distribution in thermal loading process. By using this method, the influence of Al-Cu thin film on reliability of bond wire is investigated. The results show that insertion of Al-0.5%Cu thin film can improve the reliability of bond wire.
Keywords :
aluminium; copper; finite element analysis; insulated gate bipolar transistors; semiconductor device reliability; temperature distribution; thermal expansion; thin film transistors; Al-Cu; CTE; DBC; FEA simulation; IGBT module; bonding wire; coefficient of thermal expansion; coupled thermal-mechanical simulation; direct bonded copper; electrical energy transformations device; finite element analysis; insulated gate bipolar transistor; power device; reliability; substrate; temperature distribution; thermal loading process; thermal stress; thin film; Bonding; Insulated gate bipolar transistors; Reliability; Stress; Thermal analysis; Thermal stresses; Wires; Al-Cu thin film; FEA; IGBT; reliability;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICEPT.2014.6922820
