DocumentCode
1187720
Title
Absorption recovery in strongly saturated quantum-well electroabsorption modulators
Author
Højfeldt, Sune ; Romstad, Francis ; Mørk, Jesper
Author_Institution
COM, Tech. Univ. of Denmark, Lyngby, Denmark
Volume
15
Issue
5
fYear
2003
fDate
5/1/2003 12:00:00 AM
Firstpage
676
Lastpage
678
Abstract
We observe experimentally that a quantum-well electroabsorption modulator, when strongly saturated by a highly energetic optical pulse, may exhibit an absorption recovery time much longer than for excitation with a low-energy pulse. Using a comprehensive drift-diffusion type model, we are able to explain this effect theoretically. The prolongation of the absorption recovery is induced by carrier distribution effects, not by field-induced changes in the dynamical transport parameters such as the time carriers take to escape from the wells.
Keywords
III-V semiconductors; carrier density; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical saturable absorption; quantum well devices; semiconductor quantum wells; InGaAsP; InGaAsP p-i-n structure; absorption recovery; carrier distribution effects; carrier sweep-out dynamics; drift-diffusion type model; dynamical transport parameters; highly energetic optical pulse; strongly saturated quantum-well electroabsorption modulators; Absorption; Electron mobility; Optical pulses; Optical signal processing; Optical wavelength conversion; Poisson equations; Pulse generation; Pulse modulation; Quantum wells; Schrodinger equation;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2003.809986
Filename
1196133
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