• DocumentCode
    1187720
  • Title

    Absorption recovery in strongly saturated quantum-well electroabsorption modulators

  • Author

    Højfeldt, Sune ; Romstad, Francis ; Mørk, Jesper

  • Author_Institution
    COM, Tech. Univ. of Denmark, Lyngby, Denmark
  • Volume
    15
  • Issue
    5
  • fYear
    2003
  • fDate
    5/1/2003 12:00:00 AM
  • Firstpage
    676
  • Lastpage
    678
  • Abstract
    We observe experimentally that a quantum-well electroabsorption modulator, when strongly saturated by a highly energetic optical pulse, may exhibit an absorption recovery time much longer than for excitation with a low-energy pulse. Using a comprehensive drift-diffusion type model, we are able to explain this effect theoretically. The prolongation of the absorption recovery is induced by carrier distribution effects, not by field-induced changes in the dynamical transport parameters such as the time carriers take to escape from the wells.
  • Keywords
    III-V semiconductors; carrier density; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical saturable absorption; quantum well devices; semiconductor quantum wells; InGaAsP; InGaAsP p-i-n structure; absorption recovery; carrier distribution effects; carrier sweep-out dynamics; drift-diffusion type model; dynamical transport parameters; highly energetic optical pulse; strongly saturated quantum-well electroabsorption modulators; Absorption; Electron mobility; Optical pulses; Optical signal processing; Optical wavelength conversion; Poisson equations; Pulse generation; Pulse modulation; Quantum wells; Schrodinger equation;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2003.809986
  • Filename
    1196133