Title :
Lossless electroabsorption modulator monolithically integrated with a semiconductor optical amplifier and a passive waveguide
Author :
Asaka, K. ; Suzaki, Y. ; Kawaguchi, Y. ; Kondo, S. ; Noguchi, Y. ; Okamoto, H. ; Iga, R. ; Oku, S.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
fDate :
5/1/2003 12:00:00 AM
Abstract :
We have developed a monolithic integrated device consisting of an electroabsorption modulator and a semiconductor optical amplifier (SOA) connected by a deep-ridge passive waveguide by means of butt-joint selective area growth. Lossless operation with a high extinction ratio of 32 dB and clear eye opening at 10 Gb/s are successfully achieved. We confirm that the optical injection should be from the SOA side of the device to obtain a wide error-free range of incident optical power from -20 to +10 dBm. Our device could lead to richly functional photonic integrated circuits comprising arrayed waveguide gratings (AWGs) for advanced wavelength-division-multiplexing networks, since the passive waveguide has the same structure as AWGs.
Keywords :
electro-optical modulation; electroabsorption; integrated optics; optical waveguides; semiconductor optical amplifiers; 10 Gbit/s; BER characteristics; SOA; arrayed waveguide gratings; butt-joint selective area growth; clear eye opening; deep-ridge passive waveguide; high extinction ratio; lossless electroabsorption modulator; monolithic integrated device; monolithic integration; optical injection; richly functional photonic integrated circuits; semiconductor optical amplifier; wavelength-division-multiplexing networks; wide error-free incident optical power range; Arrayed waveguide gratings; Extinction ratio; Optical devices; Optical losses; Optical modulation; Optical waveguides; Photonic integrated circuits; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.809947
