DocumentCode
1188007
Title
A recessed-gap capacitive-gate GaAs CCD
Author
Colbeth, R.E. ; Song, J.-I. ; Rossi, D.V. ; Fossum, Eric R.
Author_Institution
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume
10
Issue
12
fYear
1989
Firstpage
525
Lastpage
527
Abstract
A MESFET-compatible structure for GaAs capacitive-gate CCDs that eliminates the necessity for submicrometer interelectrode gaps and simplifies device fabrication is presented. This recessed-gap structure solves problems of low gate-channel-gate breakdown and large parasitic gate-to-gate capacitance associated with ultrasmall gaps. Dark current is also reduced. Modeling and experimental results are reported.<>
Keywords
III-V semiconductors; charge-coupled device circuits; gallium arsenide; semiconductor technology; GaAs; MESFET-compatible structure; breakdown voltage increase; capacitive gate CCD; dark current reduction; device fabrication simplification; experimental results; parasitic capacitance reduction; recessed-gap structure; Charge coupled devices; Clocks; Doping; Electrodes; Fabrication; Gallium arsenide; MESFETs; Photonic band gap; Poisson equations; Potential well;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.43128
Filename
43128
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