• DocumentCode
    1188347
  • Title

    A selectively contacted dual-channel HEMT

  • Author

    Khanna, Ravi ; Das, Mukunda B. ; Smith, Doranand D. ; Iafrate, Gerald J. ; Newman, P.G.

  • Author_Institution
    Center for Electron. Mater. & Process., Pennsylvania State Univ., University Park, PA, USA
  • Volume
    10
  • Issue
    12
  • fYear
    1989
  • Firstpage
    531
  • Lastpage
    533
  • Abstract
    A dual-channel high-electron-mobility transistor (HEMT) with selective contacts to each channel is discussed. The conduction properties of each individual channel are obtained using simple DC measurements. Isolation between the channels and the presence of the kink effect are discussed. In addition, inverter-like behavior from a single device is obtained at 77 K.<>
  • Keywords
    high electron mobility transistors; 77 K; DC measurements; conduction properties; dual-channel HEMT; high-electron-mobility transistor; inverter-like behavior; isolation between channels; kink effect; selective contacts; Annealing; Electrons; Etching; Fabrication; Gallium arsenide; Gold; HEMTs; Laboratories; MODFETs; Ohmic contacts;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.43130
  • Filename
    43130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1188347