• DocumentCode
    1188361
  • Title

    Resistive Switching in \\hbox {CeO}_{x} Films for Nonvolatile Memory Application

  • Author

    Sun, Xiao ; Sun, Bing ; Liu, Lifeng ; Xu, Nuo ; Liu, Xiaoyan ; Han, Ruqi ; Kang, Jinfeng ; Xiong, Guangcheng ; Ma, T.P.

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing
  • Volume
    30
  • Issue
    4
  • fYear
    2009
  • fDate
    4/1/2009 12:00:00 AM
  • Firstpage
    334
  • Lastpage
    336
  • Abstract
    Al/CeOx/Pt devices with nonstoichiometric CeOx (1.5<x<2) films were fabricated. The unique resistive switching (RS) behaviors for resistive random access memory applications, including stable and sharp bipolar RS processes and a multilevel and self-stop set process without current compliance and without excessive requirement on a high-voltage electroforming process, were demonstrated. A multifilament switching model based on the distribution characteristics of oxygen vacancies in CeOx films is proposed to explain the observed RS behaviors.
  • Keywords
    random-access storage; semiconductor storage; switching circuits; Al-CeO-Pt; bipolar resistive switching; high-voltage electroforming process; multifilament switching model; nonstoichiometric films; nonvolatile memory application; oxygen vacancies; resistive random access memory application; self-stop set process; $hbox{CeO}_{x}$; conducting filament; oxygen vacancy; resistive switching (RS);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2014256
  • Filename
    4799144
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1188361