A technique for the investigation of deep levels on irradiated silicon based on the Lazarus effect

A technique for the investigation of deep levels on irradiated silicon by measuring the charge collection efficiency (CCE) of samples from 220 down to 90 K is presented here. The temperature and time dependencies of the CCE have been measured with unprecedented precision and resolution for standard and oxygenated silicon diodes, and the data obtained have been analyzed in the framework of the Lazarus effect and polarization models, extracting information about the radiation-induced deep levels in the materials. Results are presented and discussed in terms of these models and what can be inferred from them when applied to experimental data.