Title : 
Near speed-of-light signaling over on-chip electrical interconnects
         
        
            Author : 
Chang, Richard T. ; Talwalkar, Niranjan ; Yue, C. Patrick ; Wong, S. Simon
         
        
            Author_Institution : 
Center for Integrated Syst., Stanford Univ., CA, USA
         
        
        
        
        
            fDate : 
5/1/2003 12:00:00 AM
         
        
        
        
            Abstract : 
The propagation limits of electrical signals for systems built with conventional silicon processing are explored. A design which takes advantage of the inductance-dominated high-frequency regime of on-chip interconnect is shown capable of transmitting data at velocities near the speed of light. In a 0.18-μm six-level aluminum CMOS technology, an overall delay of 283 ps for a 20-mm-long line, corresponding to a propagation velocity of one half the speed of light in silicon dioxide, has been demonstrated. This approach offers a five times improvement in delay over a conventional repeater-insertion strategy.
         
        
            Keywords : 
CMOS digital integrated circuits; aluminium; delays; high-speed integrated circuits; inductance; integrated circuit interconnections; 0.18 micron; 20 mm; 283 ps; Al-SiO2-Si; conventional Si processing; electrical signal propagation limits; inductance-dominated HF regime; microstrip; monolithic integrated circuits; on-chip electrical interconnects; phase modulation; propagation delay; six-level aluminum CMOS technology; speed-of-light signaling; system scalability; transmission lines; Aluminum; CMOS technology; Delay effects; Frequency; Integrated circuit interconnections; Optical propagation; Propagation delay; Repeaters; Silicon compounds; Wire;
         
        
        
            Journal_Title : 
Solid-State Circuits, IEEE Journal of
         
        
        
        
        
            DOI : 
10.1109/JSSC.2003.810060