Title :
Effect of thermal annealing on radiation-induced degradation of bipolar technologies when the dose rate is switched from high to low
Author :
Ducret, S. ; Saigné, F. ; Boch, J. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Vaille, J.R. ; Dusseau, L. ; David, J.P. ; Ecoffet, R.
Author_Institution :
Univ. de Montpellier, France
Abstract :
The influence of an electrostatic barrier in the oxide bulk on the radiation-induced degradation of bipolar technologies is investigated by performing a thermal annealing operation before switching the dose rate from high to low. It is shown that, in our test conditions, no significant electrostatic barrier effect is at play in the device degradation.
Keywords :
annealing; bipolar integrated circuits; bipolar transistors; dosimetry; integrated circuit testing; radiation effects; bipolar integrated circuits; bipolar technologies; electrostatic barrier; enhanced low dose rate sensitivity; high dose rate; oxide bulk; radiation-induced degradation; thermal annealing; Annealing; Electrostatics; Helium; Impedance; Paper technology; Protons; Shape; Switches; Testing; Thermal degradation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839145
