Charge trapping in irradiated SOI wafers measured by second harmonic generation

Author

Jun, Bongim ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; White, Yelena V. ; Pasternak, Robert ; Rashkeev, Sergey N. ; Brunier, Francois ; Bresson, Nicolas ; Fouillat, Marion ; Cristoloveanu, Sorin ; Tolk, Norman H.

Author_Institution

Vanderbilt Univ., Nashville, TN, USA

Volume

51

Issue

6

fYear

2004

Firstpage

3231

Lastpage

3237

Abstract

Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.

Keywords

MOSFET; interface states; optical harmonic generation; radiation effects; semiconductor device measurement; silicon-on-insulator; SHG intensity; SOI UNI-BOND wafers; Si; charge trapping; electrical methods; interface fields; interface traps; irradiated SOI wafers; optical method; optical second harmonic generation; radiation effects; radiation-induced oxide; Charge measurement; Current measurement; Frequency conversion; Nonlinear optics; Optical films; Optical harmonic generation; Optical refraction; Optical sensors; Signal detection; Silicon on insulator technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.839140

Filename

1369475