DocumentCode :
1188889
Title :
Single-Electron Device With Si Nanodot Array and Multiple Input Gates
Author :
Kaizawa, Takuya ; Arita, Masashi ; Fujiwara, Akira ; Yamazaki, Kenji ; Ono, Yukinori ; Inokawa, Hiroshi ; Takahashi, Yasuo ; Choi, Jung-Bum
Author_Institution :
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Volume :
8
Issue :
4
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
535
Lastpage :
541
Abstract :
We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.
Keywords :
elemental semiconductors; logic gates; nanostructured materials; silicon; silicon-on-insulator; single electron devices; Si; control gate voltage; flexible logic gate; logic functions; multiple input gates; silicon nanodot array; silicon-on-insulator wafer; single electron device; Coulomb blockade; dot array; logic devices; logic functions; quantum dots; silicon; silicon on insulator technology; single electron;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2009.2016338
Filename :
4799194
Link To Document :
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