DocumentCode :
1188898
Title :
Wafer-Scale Growth and Transfer of Aligned Single-Walled Carbon Nanotubes
Author :
Patil, Nishant ; Lin, Albert ; Myers, Edward R. ; Ryu, Koungmin ; Badmaev, Alexander ; Zhou, Chongwu ; Wong, H. S Philip ; Mitra, Subhasish
Author_Institution :
Stanford Univ., Stanford, CA, USA
Volume :
8
Issue :
4
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
498
Lastpage :
504
Abstract :
Experimental demonstration of wafer-scale growth of well-aligned, dense, single-walled carbon nanotubes on 4" ST-cut quartz wafers is presented. We developed a new carbon nanotube (CNT) wafer-scale growth process. This process allows quartz wafers to be heated to the CNT growth temperature of 865degC through the alpha-beta phase transformation temperature of quartz (573degC) without wafer fracture. We also demonstrate wafer-scale CNT transfer to transfer these aligned CNTs from quartz wafers to silicon wafers. The CNT transfer process preserves CNT density and alignment. Carbon nanotube FETs fabricated using these transferred CNTs exhibit high yield. Wafer-scale growth and wafer-scale transfer of aligned CNTs enable carbon nanotube very large-scale integration circuits and their large-scale integration with silicon CMOS.
Keywords :
CMOS integrated circuits; VLSI; carbon nanotubes; elemental semiconductors; field effect transistors; nanotechnology; quartz; silicon; solid-state phase transformations; C; CNT; FET; Si; SiO2; VLSI circuits; alpha-beta phase transformation temperature; large-scale integration circuits; quartz wafers; silicon CMOS; silicon wafers; single-walled carbon nanotube growth; temperature 865 C; very large-scale integration; wafer-scale growth; wafer-scale transfer; Carbon nanotube FETs; wafer-scale carbon nanotube growth; wafer-scale carbon nanotube transfer;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2009.2016562
Filename :
4799195
Link To Document :
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