New experimental findings for single-event gate rupture in MOS capacitors and linear devices

Author

Lum, Gary K. ; Boruta, Nicholas ; Baker, J.M. ; Robinette, L. ; Shaneyfelt, M.R. ; Schwank, J.R. ; Dodd, P.E. ; Felix, J.A.

Author_Institution

Lockheed-Martin Space Syst. Co., Sunnyvale, CA, USA

Volume

51

Issue

6

fYear

2004

Firstpage

3263

Lastpage

3269

Abstract

Mechanisms for single-event gate rupture (SEGR) in MOS capacitors and linear integrated circuits (ICs ) are explored at ion energies greater than 1 GeV. We find that SEGR thresholds depend strongly on ion energy, but are independent of oxide defects, bias polarity, doping concentration, and ionizing dose. The number of SEGR strikes across a MOS capacitor was measured, and the SEGR response cross section distinctly shows an electric field threshold. The importance of having stiffening and speedup capacitors at the device is discussed.

Keywords

MOS capacitors; doping profiles; electric fields; fracture; integrated circuits; ion beam effects; MOS capacitors; SEGR response cross section; bias polarity; catastrophic gate oxide failure; dielectric gate rupture; doping concentration; electric field threshold; ion energies; ionizing dose; linear devices; linear integrated circuits; oxide defects; single-event gate rupture; speedup capacitors; stiffening capacitors; Analog integrated circuits; Dielectric devices; Dielectric measurements; Doping; Electric variables measurement; Integrated circuit measurements; Laboratories; MOS capacitors; MOSFETs; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.840262

Filename

1369480