DocumentCode
1188920
Title
Angular dependence of multiple-bit upsets induced by protons in a 16 mbit DRAM
Author
Buchner, Stephen ; Campbell, Arthur ; Reed, Robert ; Fodness, Bryan ; Kuboyama, Satoshi
Author_Institution
QSS Group Inc., Seabrook, MD, USA
Volume
51
Issue
6
fYear
2004
Firstpage
3270
Lastpage
3277
Abstract
The number of double-bit upsets induced by protons in a 16 Mb DRAM was found to increase with angle of incidence. The increase was greater for intermediate energy (63 MeV) protons than for high-energy (198 MeV) protons. An explanation is offered and the results of a calculation using the CUPID program agree with the observations.
Keywords
DRAM chips; physics computing; proton effects; 16 Mbit DRAM; CUPID program; SEU; angle of incidence; angular dependence; double-bit upsets; high-energy protons; intermediate energy protons; linear energy transfer; multiple-bit upsets; single event upset; Anisotropic magnetoresistance; Circuits; Energy exchange; Energy measurement; Particle measurements; Protons; Random access memory; Scattering; Silicon; Single event upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.839169
Filename
1369481
Link To Document