Transient response of III-V field-effect transistors to heavy-ion irradiation

Author

McMorrow, Dale ; Boos, J. Brad ; Knudson, Alvin R. ; Lotshaw, William T. ; Park, Doe ; Melinger, Joseph S. ; Bennett, Brian R. ; Torres, Alphonse ; Ferlet-Cavrois, Veronique ; Sauvestre, Jean-Etienne ; D´hose, C. ; Flament, Olivier

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

51

Issue

6

fYear

2004

Firstpage

3324

Lastpage

3331

Abstract

The single-event effects response of three different III-V field-effect transistor technologies (GaAs MESFET, InAlAs/InGaAs HEMT, and AlSb/InAs HEMT) is measured for MeV and GeV heavy-ion irradiation. These measurements reveal significant charge enhancement and very slow, microsecond-timescale relaxation times for the GaAs and InAlAs/InGaAs devices, with a much faster recovery from the ionizing event observed for the AlSb/InAs HEMTs.

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; ion beam effects; transient response; AlSb-InAs; AlSb/InAs HEMT; GaAs; GaAs MESFET; GeV heavy-ion irradiation; III-V field-effect transistors; InAlAs-InGaAs; InAlAs/InGaAs HEMT; MeV heavy-ion irradiation; charge collection; ionizing event; microsecond-timescale relaxation times; single-event effects response; single-event transient; single-event upset; transient response; Charge measurement; Current measurement; FETs; Gallium arsenide; HEMTs; III-V semiconductor materials; Indium compounds; Indium gallium arsenide; MESFETs; Transient response;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.839529

Filename

1369489