Title :
Improved model for single-event burnout mechanism
Author :
Kuboyama, Satoshi ; Ikeda, Naomi ; Hirao, Toshio ; Matsuda, Sumio
Author_Institution :
Japan Aerosp. Exploration Agency, Tsukuba, Japan
Abstract :
We describe an improved model for single-event burnout (SEB) mechanism. The model includes the direct tunneling of carriers at the interface of epitaxial layer and substrate. Compared with our previous models, the new model is more successful in reproducing the voltage dependence of the collected charge when incident heavy ions strike the emitter area. The model clearly explains the reason why the emitter stripe region was more susceptible to SEBs.
Keywords :
bipolar transistors; ion beam effects; power MOSFET; semiconductor device models; tunnelling; BJT; avalanche multiplication; bipolar junction transistor; charge collection; direct carrier tunneling; emitter stripe region; energetic particle induced charge spectroscopy; epitaxial layer-substrate interface; heavy ions strike; power MOSFET; single-event burnout mechanism; voltage dependence; Electrodes; Epitaxial layers; MOSFET circuits; Poisson equations; Power MOSFET; Semiconductor process modeling; Spectroscopy; Substrates; Tunneling; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839512
