SEMM-2: a modeling system for single event upset analysis

Author

Tang, Henry H K ; Cannon, Ethan H.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

51

Issue

6

fYear

2004

Firstpage

3342

Lastpage

3348

Abstract

We describe SEMM-2, a new simulation system for the analysis of radiation-induced single event upsets which builds on the initial SEMM tool. Developed for the current and future CMOS technologies, SEMM-2 improves the generation of radiation events. The atomic databases which describe ion energy loss with transport through device materials are generalized. Enhancements of the nuclear collision event generation include more accurate and efficient methods for generating elastic events and more thorough treatment of inelastic processes. We present illustrative simulations where more accurately accounting for the metallization layers significantly impacts the simulated single event failure rate.

Keywords

CMOS integrated circuits; alpha-particle effects; cosmic rays; neutron effects; proton effects; semiconductor device models; CMOS technologies; SEMM-2; alpha particle-induced radiation; atomic databases; cosmic ray-induced radiation; elastic events; heavy ion-induced radiation; high-energy hadron-induced radiation; inelastic process; ion energy loss; metallization layers; microelectronics; neutron-induced radiation; nuclear collision event generation; particle-induced soft errors; proton-induced radiation; radiation effects; radiation effects modeling methodology; radiation-induced single event upset analysis; reliability; simulated single event failure rate; single event upsets; stability; Analytical models; Atomic layer deposition; Atomic measurements; CMOS technology; Databases; Discrete event simulation; Energy loss; Nuclear power generation; Semiconductor device modeling; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.839507

Filename

1369492