Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg $^{+}$ Implanted Current Blocking Layer

A method for forming a current blocking layer (CBL) by ion implantation in GaN-based vertical-injection light-emitting diodes (VI-LEDs) was proposed. It was found that the use of CBL in VI-LEDs can effectively reduce the current crowding effect and enhance the light output power. The uniform emission intensity distribution of VI-LEDs with CBL was demonstrated by electroluminescence measurements. Experimental results show that the wall-plug efficiency was enhanced by 12.3% at an injection current of 20 mA, compared to that of VI-LEDs without CBL, and by 56.2% compared to that of conventional LEDs. The device simulation results reveal that the current path can be blocked by CBL, resulting in high light extraction efficiencies and large current densities within the effective emission region of active layers.