Title :
Analysis of body-tie effects on SEU resistance of advanced FD-SOI SRAMs through mixed-mode 3-D Simulations
Author :
Hirose, K. ; Saito, L. ; Fukuda, S. ; Kuroda, Y. ; Ishii, S. ; Takahashi, D. ; Yamamoto, K.
Author_Institution :
Inst. of Space & Astronaut. Sci., Kanagawa, Japan
Abstract :
The 128-kb SOI SRAMs without body-ties had a threshold LET of 3.6 MeV/(mg/cm2), which was increased to 9.0 MeV/(mg/cm2) by adding body-ties. We used a mixed-mode three-dimensional simulation to analyze the effects of the body-ties on SEU resistance for FD SOI SRAMs with 0.2-μm design rules. The simulations revealed an increase in the threshold LET from 5.8 to 8.1 MeV/(mg/cm2) that was mostly due to the reduced bipolar gain of the parasitic bipolar transistor and partly due to the added capacitance, which were both related to the body-ties.
Keywords :
SRAM chips; bipolar transistors; capacitance; neutron effects; semiconductor device models; silicon-on-insulator; SEU resistance; advanced FD-SOI SRAM; bipolar gain; body-tie effect; capacitance; critical charge; device simulation; mixed-mode 3-D simulations; neutron effects; parasitic bipolar transistor; threshold linear energy transfer; Analytical models; Bipolar transistors; Electric variables; Energy exchange; Immune system; Leakage current; MOSFETs; Poisson equations; Random access memory; Silicon on insulator technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839513
