Analysis of body-tie effects on SEU resistance of advanced FD-SOI SRAMs through mixed-mode 3-D Simulations

Author

Hirose, K. ; Saito, L. ; Fukuda, S. ; Kuroda, Y. ; Ishii, S. ; Takahashi, D. ; Yamamoto, K.

Author_Institution

Inst. of Space & Astronaut. Sci., Kanagawa, Japan

Volume

51

Issue

6

fYear

2004

Firstpage

3349

Lastpage

3353

Abstract

The 128-kb SOI SRAMs without body-ties had a threshold LET of 3.6 MeV/(mg/cm²), which was increased to 9.0 MeV/(mg/cm²) by adding body-ties. We used a mixed-mode three-dimensional simulation to analyze the effects of the body-ties on SEU resistance for FD SOI SRAMs with 0.2-μm design rules. The simulations revealed an increase in the threshold LET from 5.8 to 8.1 MeV/(mg/cm²) that was mostly due to the reduced bipolar gain of the parasitic bipolar transistor and partly due to the added capacitance, which were both related to the body-ties.

Keywords

SRAM chips; bipolar transistors; capacitance; neutron effects; semiconductor device models; silicon-on-insulator; SEU resistance; advanced FD-SOI SRAM; bipolar gain; body-tie effect; capacitance; critical charge; device simulation; mixed-mode 3-D simulations; neutron effects; parasitic bipolar transistor; threshold linear energy transfer; Analytical models; Bipolar transistors; Electric variables; Energy exchange; Immune system; Leakage current; MOSFETs; Poisson equations; Random access memory; Silicon on insulator technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.839513

Filename

1369493