DocumentCode
1189068
Title
Analysis of 
in a semi-infinite medium with an irregular boundary by means of network manipulators
Author
Subramaniam, Prasad ; Zemanian, Armen H.
Volume
30
Issue
5
fYear
1983
fDate
5/1/1983 12:00:00 AM
Firstpage
300
Lastpage
307
Abstract
A finite-difference method for finding the finite-power solution 
of 
in a semi-infinite medium with an irregular boundary is established. The method is radically different from the customary approach of simply truncating the medium in that the semiinfinite medium outside a strip that contains the irregular boundary is characterized by an operator-valued driving-point resistance and thereby removed from the first stage of the method. The solution within the strip is then determined by exploiting the theory of operator-valued finite ladder networks. Finally, the solution for the medium outside the strip is obtained by using the theory of infinite operator-valued ladder networks. This method is applied to a two-dimensional study of the minority-carrier density in the base region of a lateral bipolar transistor on a chip that is effectively infinitely deep so far as the transistor\´s behavior is concerned. The method is quite conservative of computer time.
of in a semi-infinite medium with an irregular boundary is established. The method is radically different from the customary approach of simply truncating the medium in that the semiinfinite medium outside a strip that contains the irregular boundary is characterized by an operator-valued driving-point resistance and thereby removed from the first stage of the method. The solution within the strip is then determined by exploiting the theory of operator-valued finite ladder networks. Finally, the solution for the medium outside the strip is obtained by using the theory of infinite operator-valued ladder networks. This method is applied to a two-dimensional study of the minority-carrier density in the base region of a lateral bipolar transistor on a chip that is effectively infinitely deep so far as the transistor\´s behavior is concerned. The method is quite conservative of computer time.Keywords
Bipolar transistors; Finite difference methods; General analysis and synthesis methods; Partial differential equations; Bipolar transistors; Boundary conditions; Finite difference methods; Image analysis; Laboratories; Partial differential equations; Strips; Telephony; Voltage;
fLanguage
English
Journal_Title
Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0098-4094
Type
jour
DOI
10.1109/TCS.1983.1085358
Filename
1085358
Link To Document