DocumentCode :
1189068
Title :
Analysis of 
in a semi-infinite medium with an irregular boundary by means of network manipulators
in a semi-infinite medium with an irregular boundary by means of network manipulatorsAuthor :
Subramaniam, Prasad ; Zemanian, Armen H.
Volume :
30
Issue :
5
fYear :
1983
fDate :
5/1/1983 12:00:00 AM
Firstpage :
300
Lastpage :
307
Abstract :
A finite-difference method for finding the finite-power solution 
of 
in a semi-infinite medium with an irregular boundary is established. The method is radically different from the customary approach of simply truncating the medium in that the semiinfinite medium outside a strip that contains the irregular boundary is characterized by an operator-valued driving-point resistance and thereby removed from the first stage of the method. The solution within the strip is then determined by exploiting the theory of operator-valued finite ladder networks. Finally, the solution for the medium outside the strip is obtained by using the theory of infinite operator-valued ladder networks. This method is applied to a two-dimensional study of the minority-carrier density in the base region of a lateral bipolar transistor on a chip that is effectively infinitely deep so far as the transistor\´s behavior is concerned. The method is quite conservative of computer time.
of in a semi-infinite medium with an irregular boundary is established. The method is radically different from the customary approach of simply truncating the medium in that the semiinfinite medium outside a strip that contains the irregular boundary is characterized by an operator-valued driving-point resistance and thereby removed from the first stage of the method. The solution within the strip is then determined by exploiting the theory of operator-valued finite ladder networks. Finally, the solution for the medium outside the strip is obtained by using the theory of infinite operator-valued ladder networks. This method is applied to a two-dimensional study of the minority-carrier density in the base region of a lateral bipolar transistor on a chip that is effectively infinitely deep so far as the transistor\´s behavior is concerned. The method is quite conservative of computer time.Keywords :
Bipolar transistors; Finite difference methods; General analysis and synthesis methods; Partial differential equations; Bipolar transistors; Boundary conditions; Finite difference methods; Image analysis; Laboratories; Partial differential equations; Strips; Telephony; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0098-4094
Type :
jour
DOI :
10.1109/TCS.1983.1085358
Filename :
1085358
Link To Document :
