DocumentCode
1189090
Title
A High-Speed Word Level Finite Field Multiplier in
Using Redundant Representation
Author
Namin, Ashkan Hosseinzadeh ; Wu, Huapeng ; Ahmadi, Majid
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
Volume
17
Issue
10
fYear
2009
Firstpage
1546
Lastpage
1550
Abstract
In this paper, a high-speed word level finite field multiplier in F2 m using redundant representation is proposed. For the class of fields that there exists a type I optimal normal basis, the new architecture has significantly higher speed compared to previously proposed architectures using either normal basis or redundant representation at the expense of moderately higher area complexity. One of the unique features of the proposed multiplier is that the critical path delay is not a function of the field size nor the word size. It is shown that the new multiplier outperforms all the other multipliers in comparison when considering the product of area and delay as a measure of performance. VLSI implementation of the proposed multiplier in a 0.18- mum complimentary metal-oxide-semiconductor (CMOS) process is also presented.
Keywords
CMOS integrated circuits; VLSI; multiplying circuits; CMOS process; VLSI; area complexity; complimentary metal-oxide-semiconductor process; critical path delay; high-speed word level finite field multiplier; normal basis; redundant representation; Finite field arithmetic; redundant representation; type I optimal normal basis; word level architecture;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2008.2003005
Filename
4799214
Link To Document