Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments

Author

Lambert, D. ; Baggio, J. ; Ferlet-Cavrois, V. ; Flament, O. ; Saigne, F. ; Sagnes, B. ; Buard, N. ; Carriére, T.

Author_Institution

CEA/DAM-Ile de France, Bruyeres-le-Chatel, France

Volume

51

Issue

6

fYear

2004

Firstpage

3435

Lastpage

3441

Abstract

This work investigates the sensitivity of bulk technologies in the terrestrial neutron environment as a function of technology scaling. Their sensitivity is analyzed with both experiments and Monte Carlo simulations. The soft error rate (SER) of future technology generations is extrapolated, analyzed and discussed on the basis of different parameters such as the interaction volume, the secondary ion species and the incident neutron energy ranges.

Keywords

Monte Carlo methods; SRAM chips; neutron effects; sensitivity analysis; Monte Carlo simulations; bulk SRAM chips; bulk technologies; incident neutron energy range; interaction volume; neutron-induced SEU; secondary ion species; sensitivity analysis; single-event upset; soft error rate; technology scaling; terrestrial neutron environment; Aerospace electronics; Discrete event simulation; Error analysis; Neutrons; Paper technology; Performance evaluation; Random access memory; SRAM chips; Single event upset; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.839133

Filename

1369507