Title :
Heavy ion-induced digital single-event transients in deep submicron Processes
Author :
Benedetto, J. ; Eaton, P. ; Avery, K. ; Mavis, D. ; Gadlage, M. ; Turflinger, T. ; Dodd, Paul E. ; Vizkelethyd, G.
Author_Institution :
Mission Res. Corp., Colorado Springs, CO, USA
Abstract :
Single-event transients (SETs) in digital circuits/processes are examined. SETs appear to substantially mitigate traditional SEU static-latch hardening techniques below 0.25 μm. The resulting IC error rate for advanced technology node hardened-electronics is dominated by the combinational-logic SET rate.
Keywords :
digital circuits; ion beam effects; radiation hardening (electronics); IC error rate; SEU static-latch hardening techniques; advanced technology node hardened-electronics; combinational-logic single-event transient rate; deep submicron processes; digital circuits; heavy ion-induced digital single-event transients; radiation effects; single event upset; transient propagation; transient pulse width; Application specific integrated circuits; Circuit testing; Cranes; Digital circuits; Error analysis; Latches; Logic devices; Radiation effects; Radiation hardening; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839173
