A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices

Author

Doghish, Mohamed Yehya ; Ho, Fat Duen

Author_Institution

Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA

Volume

39

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2771

Lastpage

2780

Abstract

A comprehensive model for metal-insulator-semiconductor (MIS) devices under dark conditions which consists of a wide range of parameters has been developed. Parameters neglected by other authors have been included. The effects of surface states, silicon dioxide thickness, substrate doping, fixed oxide charges, substrate thickness, and metal work function are taken into account. The permittivity and barrier height of thin oxide are included in the calculation. The limits on equilibrium and nonequilibrium are explored

Keywords

metal-insulator-semiconductor devices; permittivity; semiconductor device models; surface electron states; MIS devices; SiO₂ thickness; analytical model; barrier height; dark conditions; fixed oxide charges; metal work function; permittivity; substrate doping; substrate thickness; surface states; thin oxide; Analytical models; Charge carrier processes; Doping; Electrons; Insulation; Metal-insulator structures; Permittivity; Semiconductor process modeling; Substrates; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.168723

Filename

168723