Title :
Proton damage in LEDs with wavelengths above the silicon wavelength cutoff
Author :
Becker, Heidi N. ; Johnston, Allan H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Proton damage is investigated for LEDs with wavelengths of 1050 and 1550 nm. The results are compared to results for an advanced AlGaAs double heterojunction LED. Unlike the AlGaAs LED, light output degradation for the long wavelength LEDs became nonlinear with current after irradiation; more degradation was observed at lower forward currents. Minimal annealing was observed in the long wavelength LEDs during forward current injection. Mechanisms are proposed that are related to the material properties.
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; indium compounds; light emitting diodes; proton effects; semiconductor heterojunctions; 1050 nm; 1550 nm; AlGaAs; AlGaAs double heterojunction LED; InGaAs; InGaAsP; forward current injection; light output degradation; material properties; minimal annealing; proton damage; radiation effect; Annealing; Current measurement; Degradation; Forward contracts; Indium gallium arsenide; Light emitting diodes; Protons; Silicon; Testing; Wavelength measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839168
