The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements

Author

Pan, Huapu ; Beling, Andreas ; Chen, Hao ; Campbell, Joe C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA

Volume

45

Issue

3

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

273

Lastpage

277

Abstract

The effect of modulated voltage on the nonlinear response of an InGaAs-InP charge-compensated modified uni-traveling carrier photodiode is characterized using a modulated bias measurement setup. Based on experimental results for the dependence of responsivity and photodetector capacitance on bias voltage, we use a simple equivalent circuit model to explain the frequency characteristics of the intermodulation distortions caused by the modulated bias. Good agreement has been achieved between the simulation and measurement.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; intermodulation distortion; photodetectors; photodiodes; voltage measurement; InGaAs-InP; bias voltage; frequency behavior; frequency characteristics; intermodulation distortions; modified uni-traveling carrier photodiodes; modulated bias measurement setup; modulated voltage measurements; nonlinear response; photodetector capacitance; simple equivalent circuit model; Capacitance; Circuit simulation; Current measurement; Distortion measurement; Equivalent circuits; Frequency; Intermodulation distortion; Photodetectors; Photodiodes; Voltage measurement; InGaAs; linearity; modulated bias; photodiode (PD); third-order intermodulation distortion (IMD3);

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2009.2013089

Filename

4799253