Title :
The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements
Author :
Pan, Huapu ; Beling, Andreas ; Chen, Hao ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA
fDate :
3/1/2009 12:00:00 AM
Abstract :
The effect of modulated voltage on the nonlinear response of an InGaAs-InP charge-compensated modified uni-traveling carrier photodiode is characterized using a modulated bias measurement setup. Based on experimental results for the dependence of responsivity and photodetector capacitance on bias voltage, we use a simple equivalent circuit model to explain the frequency characteristics of the intermodulation distortions caused by the modulated bias. Good agreement has been achieved between the simulation and measurement.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; intermodulation distortion; photodetectors; photodiodes; voltage measurement; InGaAs-InP; bias voltage; frequency behavior; frequency characteristics; intermodulation distortions; modified uni-traveling carrier photodiodes; modulated bias measurement setup; modulated voltage measurements; nonlinear response; photodetector capacitance; simple equivalent circuit model; Capacitance; Circuit simulation; Current measurement; Distortion measurement; Equivalent circuits; Frequency; Intermodulation distortion; Photodetectors; Photodiodes; Voltage measurement; InGaAs; linearity; modulated bias; photodiode (PD); third-order intermodulation distortion (IMD3);
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2013089
