Measurement of device parameters using image recovery techniques in large-scale IC devices

Devices that respond to radiation on a cell level will produce distributions showing the relative frequency of cell response to radiation damage, i.e., a probability distribution of a cell to be damaged a certain amount. The measured distribution is the convolution of distributions from radiation responses, measurement noise, and manufacturing parameters. A method of extracting device characteristics and parameters from measured distributions via mathematical and image subtraction techniques is described.