High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes

Author

Bai, Xiaogang ; Liu, Han-Din ; Mcintosh, Dion C. ; Campbell, Joe C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA

Volume

45

Issue

3

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

300

Lastpage

303

Abstract

We report large-area, 250-mum-diameter, 4H-SiC avalanche photodiodes with low dark current and high gain. At room temperature, the dark current density is 59.5 nA/cm² at a gain of 1000. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of the recessed-window device at zero bias is estimated to be 6times10¹⁴ Omega. As a result of high external quantum efficiency, large area, and large differential resistance, a record high specific detectivity of 4.1times10¹⁴ cmHz^1/2 W^-1, has been achieved. In Geiger mode operation, high single photon detection efficiency of 30% with dark count probability of 8times10^-4 is reported.

Keywords

avalanche photodiodes; dark conductivity; photodetectors; photon counting; silicon compounds; wide band gap semiconductors; Geiger mode operation; SiC; dark count probability; differential resistance; efficiency 30 percent; high-detectivity 4H-SiC avalanche photodiode; high-external quantum efficiency; high-single-photon detection efficiency; recessed-window structure; size 250 mum; temperature 293 K to 298 K; wavelength 280 nm; Avalanche photodiodes; Chemicals; Dark current; Detectors; Etching; Immune system; Lithography; Photodetectors; Silicon carbide; Temperature; Avalanche photodiodes (APDs); photodetector; silicon carbide; ultraviolet (UV) detector;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2009.2013093

Filename

4799257