A versatile stacked storage capacitor on FLOTOX cell for megabit NVRAM´s

Author

Yamauchi, Yoshimitsu ; Tanaka, Kenichi ; Sakiyama, Keizo ; Miyake, Ryuichiro

Author_Institution

Sharp Corp., Nara, Japan

Volume

39

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2791

Lastpage

2796

Abstract

A versatile stacked storage capacitor on FLOTOX (SCF) structure is proposed for a megabit nonvolatile DRAM (NV-DRAM) cell that has all the features required for NVRAMs. The SCF structure realizes a 30.94-μm ² NV-DRAM cell with 0.8-μm design rules and allows an innovative flash store/recall (DRAM to EEPROM/EEPROM to DRAM) operation that does not disturb original data in DRAM or EEPROM. This store operation is completed in less than 10 ms. The single cell shows excellent reliability such as store endurance greater than 10⁶ cycles and EEPROM data retention in excess of 10 years under high storage temperatures of 150°C and DRAM write operation at 85°C. The SCF cell has been successfully implemented into the 1 Mb NVRAM

Keywords

CMOS integrated circuits; DRAM chips; EPROM; 0.8 micron; 1 Mbit; 10 ms; 150 degC; 85 degC; EEPROM data retention; FLOTOX cell; NVRAM; double metal CMOS process; dynamic RAM; flash store/recall; megabit nonvolatile DRAM; stacked storage capacitor; Batteries; Capacitors; EPROM; Nonvolatile memory; Random access memory; Read-write memory; Roentgenium; Substrates; Temperature; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.168725

Filename

168725